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GS8161FZ18/32/36BD
165-Bump BGA Commercial Temp Industrial Temp Features
* Flow Through mode * NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization * Fully pin-compatible with flow through NtRAMTM, NoBLTM and ZBTTM SRAMs * IEEE 1149.1 JTAG-compatible Boundary Scan * 2.5 V or 3.3 V +10%/-10% core power supply * LBO pin for Linear or Interleave Burst mode * Pin-compatible with 2M, 4M, and 8M devices * Byte write operation (9-bit Bytes) * 3 chip enable signals for easy depth expansion * ZZ pin for automatic power-down * JEDEC-standard 165-bump FP-BGA package * RoHS-compliant 165-bump BGA package available
18Mb Flow Through Synchronous NBT SRAM
5.5 ns-7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable, ZZ and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. The GS8161FZ18/32/36BD is configured to operate in Flow Through mode. The GS8161FZ18/32/36BDis implemented with GSI's high performance CMOS technology and is available in JEDECstandard 165-bump FP-BGA package.
Functional Description
The GS8161FZ18/32/36BD is an 18Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.
Parameter Synopsis
-5.5
Flow Through 2-1-1-1 tKQ tCycle Curr (x18) Curr (x32/x36) 5.5 5.5 225 255
-6.5
6.5 6.5 200 220
-7.5
7.5 7.5 185 205
Unit
ns ns mA mA
Rev: 1.00 6/2006
1/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
165 Bump BGA--x18 Commom I/O--Top View (Package D)
1 A B C D E F G H J K L M N P R NC NC NC NC NC NC NC NC DQB DQB DQB DQB DQPB NC LBO 2 A A NC DQB DQB DQB DQB MCH NC NC NC NC NC NC NC 3 E1 E2 VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A 4 BB NC VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A A 5 NC BA VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDI TMS 6 E3 CK VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC A1 A0 7 CKE W VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDO TCK 8 ADV G VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A A 9 A A VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A 10 A A NC NC NC NC NC NC DQA DQA DQA DQA NC A A 11 A NC DQPA DQA DQA DQA DQA ZZ NC NC NC NC NC NC A A B C D E F G H J K L M N P R
11 x 15 Bump BGA--13 mm x 15 mm Body--1.0 mm Bump Pitch
Rev: 1.00 6/2006
2/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
165 Bump BGA--x32 Common I/O--Top View (Package D)
1 A B C D E F G H J K L M N P R NC NC NC DQC DQC DQC DQC NC DQD DQD DQD DQD NC NC LBO 2 A A NC DQC DQC DQC DQC MCH DQD DQD DQD DQD NC NC NC 3 E1 E2 VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A 4 BC BD VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A A 5 BB BA VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDI TMS 6 E3 CK VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC A1 A0 7 CKE W VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDO TCK 8 ADV G VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A A 9 A A VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A 10 A A NC DQB DQB DQB DQB NC DQA DQA DQA DQA NC A A 11 NC NC NC DQB DQB DQB DQB ZZ DQA DQA DQA DQA NC NC A A B C D E F G H J K L M N P R
11 x 15 Bump BGA--13 mm x 15 mm Body--1.0 mm Bump Pitch
Rev: 1.00 6/2006
3/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
165 Bump BGA--x36 Common I/O--Top View (Package D)
1 A B C D E F G H J K L M N P R NC NC DQPC DQC DQC DQC DQC NC DQD DQD DQD DQD DQPD NC LBO 2 A A NC DQC DQC DQC DQC MCH DQD DQD DQD DQD NC NC NC 3 E1 E2 VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A 4 BC BD VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A A 5 BB BA VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDI TMS 6 E3 CK VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC A1 A0 7 CKE W VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDO TCK 8 ADV G VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A A 9 A A VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A 10 A A NC DQB DQB DQB DQB NC DQA DQA DQA DQA NC A A 11 NC NC DQPB DQB DQB DQB DQB ZZ DQA DQA DQA DQA DQPA NC A A B C D E F G H J K L M N P R
11 x 15 Bump BGA--13 mm x 15 mm Body--1.0 mm Bump Pitch
Rev: 1.00 6/2006
4/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
GS8161FZ18/32/36BD 165-Bump BGA Pin Description Symbol
A0, A1 A DQA DQB DQC DQD BA, BB, BC, BD NC CK CKE W E1 E3 E2 G ADV ZZ LBO TMS TDI TDO TCK MCH VDD VSS VDDQ
Type
I I I/O I -- I I I I I I I I I I I I O I -- I I I
Description
Address field LSBs and Address Counter Preset Inputs Address Inputs Data Input and Output pins Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low No Connect Clock Input Signal; active high Clock Input Buffer Enable; active low Write Enable; active low Chip Enable; active low Chip Enable; active low Chip Enable; active high Output Enable; active low Burst address counter advance enable; active high Sleep mode control; active high Linear Burst Order mode; active low Scan Test Mode Select Scan Test Data In Scan Test Data Out Scan Test Clock Must Connect High Core power supply I/O and Core Ground Output driver power supply
Rev: 1.00 6/2006
5/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
GS8161FZ18/32/36B NBT SRAM Functional Block Diagram
DQa-DQn
NC
Q
Write Data
K
Register 1 Register 2
D
Write Address
Burst Counter
K
Register 2
SA1' SA0'
18
Read, Write and
Data Coherency
D
K
K
Control Logic
SA1 SA0
K
Write Address
Register 1
Match
Q
E1
E2
BC
A0-An
LBO
BD
BA
BB
E3
W
K
ADV
CK
Rev: 1.00 6/2006
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(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
CKE
G
Write Drivers
Memory Array
Write Data
K
Sense Amps
K
GS8161FZ18/32/36BD
Functional Details
Clocking Deassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation. Flow Through Mode Read and Write Operations Flow Through NBT SRAMs are equipped with rising-edge-triggered input registers that capture data-in, address, and control input signals, but do not have a data output register like the one found on pipelined NBT SRAMs. Once a read command and an associated read address is clocked into the RAM, the read operation proceeds and, if the Output Enable pin is driven active low, culminates with the read data appearing on the RAM output pins, even if no additional clocks are sent to the RAM. A write operation in a Flow Through NBT SRAM begins when a write command and write address are clocked into the RAM. Next, data-in for that write address must be applied to the input pins and held for capture by the very next rising edge of clock. A write protocol like the one used on Flow Through NBT SRAMs--the capture of the write address and write command on one clock and the capture of the write data-in on the next clock--is often described as a Late Write protocol. It is the combination of the Flow Through read protocol and the Late Write write protocol that allows the Flow Through NBT SRAM to achieve seamless back-to-back, read-write-read transitions on a bi-directional data bus without requiring the user to insert dead cycles to prevent bus contention during the transition from read to write or write to read.
Rev: 1.00 6/2006
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(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Synchronous Truth Table Operation
Read Cycle, Begin Burst Read Cycle, Continue Burst NOP/Read, Begin Burst Dummy Read, Continue Burst Write Cycle, Begin Burst Write Cycle, Continue Burst Write Abort, Continue Burst Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle Deselect Cycle, Continue Sleep Mode Clock Edge Ignore, Stall
Type Address CK CKE ADV W Bx E1 E2 E3 G ZZ
R B R B W B B D D D D D External Next External Next External Next Next None None None None None None Current L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H X L-H L L L L L L L L L L L L X H L H L H L H H L L L L H X X H X H X L X X X X X L X X X X X X X L L H X X X H X X X L X L X L X X H X X L X X X H X H X H X X X X L H X X X L X L X L X X X H X L X X X L L H H X X X X X X X X X X L L L L L L L L L L L L H L
DQ
Q Q High-Z High-Z D D
Notes
1,10 2 1,2,10 3 1,3,10
High-Z 1,2,3,10 High-Z High-Z High-Z High-Z High-Z High-Z 4 1 1
Notes: 1. Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Deselect cycle is executed first. 2. Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active so no write operation is performed. 3. G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles. 4. If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus will remain in High Z. 5. X = Don't Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write signals are Low 6. All inputs, except G and ZZ must meet setup and hold times of rising clock edge. 7. Wait states can be inserted by setting CKE high. 8. This device contains circuitry that ensures all outputs are in High Z during power-up. 9. A 2-bit burst counter is incorporated. 10. The address counter is incriminated for all Burst continue cycles.
Rev: 1.00 6/2006
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(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Flow Through Mode Data I/O State Diagram
BW High Z (Data In) D
R W
RB Data Out (Q Valid) D
W
R
High Z B D
Key
Input Command Code
Notes:
1. The Hold command (CKE Low) is not shown because it prevents any state change.
Transition
Current State (n) Next State (n+1)
n n+1
2. W, R, B, and D represent input command codes as indicated in the Truth Tables.
n+2
n+3
Clock (CK)
Command
Current State
Next State
Current State and Next State Definition for: Pipeline and Flow through Read Write Control State Diagram
Rev: 1.00 6/2006
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Burst Cycles Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode. Burst Order The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is low, a linear burst sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables below for details.
Mode Pin Functions Mode Name
Burst Order Control Power Down Control
Pin Name
LBO ZZ
State
L H L or NC H
Function
Linear Burst Interleaved Burst Active Standby, IDD = ISB
Note: There is a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the above table.
Burst Counter Sequences
Linear Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0]
1st address 2nd address 3rd address 4th address 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10
Interleaved Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0]
1st address 2nd address 3rd address 4th address 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00
Note: The burst counter wraps to initial state on the 5th clock.
Note: The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Rev: 1.00 6/2006
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(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Sleep Mode During normal operation, ZZ must be pulled low, either by the user or by it's internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of Sleep mode is dictated by the length of time the ZZ is in a high state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing Diagram
tKH tKC CK tZZR tZZS ZZ tZZH tKL
Rev: 1.00 6/2006
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(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
VDD VDDQ VI/O VIN IIN IOUT PD TSTG TBIAS
Description
Voltage on VDD Pins Voltage in VDDQ Pins Voltage on I/O Pins Voltage on Other Input Pins Input Current on Any Pin Output Current on Any I/O Pin Package Power Dissipation Storage Temperature Temperature Under Bias
Value
-0.5 to 4.6 -0.5 to VDD -0.5 to VDDQ +0.5 ( 4.6 V max.) -0.5 to VDD +0.5 ( 4.6 V max.) +/-20 +/-20 1.5 -55 to 125 -55 to 125
Unit
V V V V mA mA W
o o
C C
Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.
Power Supply Voltage Ranges Parameter
3.3 V Supply Voltage 2.5 V Supply Voltage 3.3 V VDDQ I/O Supply Voltage 2.5 V VDDQ I/O Supply Voltage
Symbol
VDD3 VDD2 VDDQ3 VDDQ2
Min.
3.0 2.3 3.0 2.3
Typ.
3.3 2.5 3.3 2.5
Max.
3.6 2.7 VDD VDD
Unit
V V V V
Notes
Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Rev: 1.00 6/2006
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
VDDQ3 Range Logic Levels Parameter
VDD Input High Voltage VDD Input Low Voltage VDDQ I/O Input High Voltage VDDQ I/O Input Low Voltage
Symbol
VIH VIL VIHQ VILQ
Min.
2.0 -0.3 2.0 -0.3
Typ.
-- -- -- --
Max.
VDD + 0.3 0.8 VDD + 0.3 0.8
Unit
V V V V
Notes
1 1 1,3 1,3
Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. 3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels Parameter
VDD Input High Voltage VDD Input Low Voltage VDDQ I/O Input High Voltage VDDQ I/O Input Low Voltage
Symbol
VIH VIL VIHQ VILQ
Min.
0.6*VDD -0.3 0.6*VDD -0.3
Typ.
-- -- -- --
Max.
VDD + 0.3 0.3*VDD VDD + 0.3 0.3*VDD
Unit
V V V V
Notes
1 1 1,3 1,3
Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. 3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures Parameter
Ambient Temperature (Commercial Range Versions) Ambient Temperature (Industrial Range Versions)
Symbol
TA TA
Min.
0 -40
Typ.
25 25
Max.
70 85
Unit
C C
Notes
2 2
Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Rev: 1.00 6/2006
13/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Undershoot Measurement and Timing
VIH VDD + 2.0 V VSS 50% VSS - 2.0 V 20% tKC VIL 50% VDD
Overshoot Measurement and Timing
20% tKC
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Input Capacitance Input/Output Capacitance Note: These parameters are sample tested.
Symbol
CIN CI/O
Test conditions
VIN = 0 V VOUT = 0 V
Typ.
4 6
Max.
5 7
Unit
pF pF
AC Test Conditions Parameter
Input high level Input low level Input slew rate Input reference level Output reference level Output load
Conditions
VDD - 0.2 V 0.2 V 1 V/ns VDD/2 VDDQ/2 Fig. 1
Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table.
Output Load 1 DQ 50 VDDQ/2
* Distributed Test Jig Capacitance
30pF*
Rev: 1.00 6/2006
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(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
DC Electrical Characteristics Parameter
Input Leakage Current (except mode pins) ZZ Input Current Output Leakage Current Output High Voltage Output High Voltage Output Low Voltage
Symbol
IIL IIN1 IOL VOH2 VOH3 VOL
Test Conditions
VIN = 0 to VDD VDD VIN VIH 0 V VIN VIH Output Disable, VOUT = 0 to VDD IOH = -8 mA, VDDQ = 2.375 V IOH = -8 mA, VDDQ = 3.135 V IOL = 8 mA
Min
-1 uA -1 uA -1 uA -1 uA 1.7 V 2.4 V --
Max
1 uA 1 uA 100 uA 1 uA -- -- 0.4 V
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Operating Currents
-5.5 Parameter Test Conditions Mode Symbol 0 to 70C
235 20 215 10 40
-6.5 -40 to 85C
245 20 225 10 50
-7.5 -40 to 85C
215 15 200 10 50
0 to 70C
205 15 190 10 40
0 to 70C
190 15 175 10 40
-40 to 85C
200 15 185 10 50
Unit
Operating Current Standby Current Deselect Current
Device Selected; All other inputs VIH or VIL Output open ZZ VDD - 0.2 V Device Deselected; All other inputs VIH or VIL
(x32/ x36) (x18)
Flow Through Flow Through Flow Through
IDD IDDQ IDD IDDQ ISB IDD
mA mA mA
-- --
Flow Through
60
65
50
55
50
55
mA
Notes: 1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation. 2. All parameters listed are worst case scenario.
AC Electrical Characteristics
Parameter
Clock Cycle Time Clock to Output Valid Clock to Output Invalid Clock to Output in Low-Z Setup time Hold time Clock HIGH Time Clock LOW Time Clock to Output in High-Z G to Output Valid G to output in Low-Z G to output in High-Z ZZ setup time ZZ hold time ZZ recovery
Symbol
tKC tKQ tKQX tLZ1 tS tH tKH tKL tHZ1 tOE tOLZ
1 1
-5.5
Min 5.5 -- 2.0 2.0 1.5 0.5 1.3 1.5 1.5 -- 0 -- 5 1 20 Max -- 5.5 -- -- -- -- -- -- 2.5 2.5 -- 2.5 -- -- -- Min 6.5 -- 2.0 2.0 1.5 0.5 1.3 1.5 1.5 -- 0 -- 5 1 20
-6.5
Max -- 6.5 -- -- -- -- -- -- 3.0 3.0 -- 3.0 -- -- -- Min 7.5 -- 2.0 2.0 1.5 0.5 1.5 1.7 1.5 -- 0 -- 5 1 20
-7.5
Max -- 7.5 -- -- -- -- -- -- 3.0 3.8 -- 3.8 -- -- --
Unit
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Flow Through
tOHZ tZZS
2 2
tZZH
tZZR
Notes: 1. These parameters are sampled and are not 100% tested. 2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above.
Rev: 1.00 6/2006
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(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Flow Through Mode Timing (NBT)
Write A
Write B
Write B+1 tKL tKH
Read C tKC
Cont
Read D
Write E
Read F
Write G
CK
tH tS
CKE
tH tS
E*
tH tS
ADV
tH tS
W
tH tS
Bn
tH
A0-An
tS A
B tH tS
C tKQ tLZ
D(B) D(B+1) Q(C)
D
E tKQX tHZ
Q(D)
F tKQ tLZ
D(E)
G tKQX
Q(F) D(G)
DQ
D(A)
tOLZ tOE tOHZ
G
*Note: E = High(False) if E1 = 1 or E2 = 0 or E3 = 1
JTAG Port Operation
Overview The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with VDD. The JTAG output drivers are powered by VDDQ. Disabling the JTAG Port It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG Port unused, TCK, TDI, and TMS may be left floating or tied to either VDD or VSS. TDO should be left unconnected.
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
JTAG Pin Descriptions Pin
TCK TMS
Pin Name
Test Clock Test Mode Select
I/O
In In
Description
Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP controller state machine. An undriven TMS input will produce the same result as a logic one input level. The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP Controller state machine and the instruction that is currently loaded in the TAP Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce the same result as a logic one input level.
TDI
Test Data In
In
TDO
Test Data Out
Output that is active depending on the state of the TAP state machine. Output changes in Out response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO.
Note: This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up.
JTAG Port Registers
Overview The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the TDI and TDO pins. Instruction Register The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the controller is placed in Test-Logic-Reset state. Bypass Register The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAM's JTAG Port to another device in the scan chain with as little delay as possible. Boundary Scan Register The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM's input or I/O pins. The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port's TDO pin. The Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z, SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.
Rev: 1.00 6/2006
18/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
JTAG TAP Block Diagram
* * *
M*
*
*
*
*
*
*
* *
1
Boundary Scan Register
0
Bypass Register
210
0
Instruction Register TDI ID Code Register
31 30 29
TDO
*
***
210
Control Signals TMS TCK Test Access Port (TAP) Controller
* For the value of M, see the BSDL file, which is available at by contacting us at apps@gsitechnology.com. Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM. It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
ID Register Contents
GSI Technology JEDEC Vendor ID Code Presence Register 0 1
Not Used
Bit #
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 X X X X X X X X X X X X X X X X X X X X 0 0 011011001
Rev: 1.00 6/2006
19/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Tap Controller Instruction Set
Overview There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific (Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load address, data or control signals into the RAM or to preload the I/O buffers. When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01. When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this device is listed in the following table.
JTAG Tap Controller State Diagram
1
Test Logic Reset
0 1 1 1
0
Run Test Idle
Select DR
0 1
Select IR
0 1
Capture DR
0
Capture IR
0
Shift DR
1 1
0 1
Shift IR
1
0
Exit1 DR
0
Exit1 IR
0
Pause DR
1
0
Pause IR
1
0
Exit2 DR
1
0
Exit2 IR
1
0
Update DR
1 0
Update IR
1 0
Instruction Descriptions BYPASS When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path.
Rev: 1.00 6/2006
20/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then places the boundary scan register between the TDI and TDO pins. EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with all logic 0s. The EXTEST command does not block or override the RAM's input pins; therefore, the RAM's internal state is still determined by its input pins. Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command. Then the EXTEST command is used to output the Boundary Scan Register's contents, in parallel, on the RAM's data output drivers on the falling edge of TCK when the controller is in the Update-IR state. Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruction is selected, the sate of all the RAM's input and I/O pins, as well as the default values at Scan Register locations not associated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR state, the RAM's output pins drive out the value of the Boundary Scan Register location with which each output pin is associated. IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the Test-Logic-Reset state. SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (highZ) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR state. RFU These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction.
Rev: 1.00 6/2006
21/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
JTAG TAP Instruction Set Summary Instruction
EXTEST IDCODE SAMPLE-Z RFU SAMPLE/ PRELOAD GSI RFU
Code
000 001 010 011 100 101 110
Description
Places the Boundary Scan Register between TDI and TDO. Preloads ID Register and places it between TDI and TDO. Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. Forces all RAM output drivers to High-Z. Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. GSI private instruction. Do not use this instruction; Reserved for Future Use. Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
Notes
1 1, 2 1 1 1 1 1 1
BYPASS 111 Places Bypass Register between TDI and TDO. Notes: 1. Instruction codes expressed in binary, MSB on left, LSB on right. 2. Default instruction automatically loaded at power-up and in test-logic-reset state.
Rev: 1.00 6/2006
22/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
JTAG Port Recommended Operating Conditions and DC Characteristics (2.5/3.3 V Version) Parameter
2.5 V Test Port Input High Voltage 2.5 V Test Port Input High Voltage 3.3 V Test Port Input High Voltage 3.3 V Test Port Input Low Voltage TMS, TCK and TDI Input Leakage Current TMS, TCK and TDI Input Leakage Current TDO Output Leakage Current Test Port Output High Voltage Test Port Output Low Voltage Test Port Output CMOS High Test Port Output CMOS Low
Symbol
VIHJ2 VIHJ2 VIHJ3 VILJ3 IINHJ IINLJ IOLJ VOHJ VOLJ VOHJC VOLJC
Min.
0.6 * VDD2 0.6 * VDD2 2.0 -0.3 -300 -1 -1 1.7 -- VDDQ - 100 mV --
Max.
VDD2 +0.3 VDD2 +0.3 VDD3 +0.3 0.8 1 100 1 -- 0.4 -- 100 mV
Unit Notes
V V V V uA uA uA V V V V 1 1 1 1 2 3 4 5, 6 5, 7 5, 8 5, 9
Notes: 1. Input Under/overshoot voltage must be -2 V < Vi < VDDn +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC. 2. VILJ VIN VDDn 3. 0 V VIN VILJn 4. Output Disable, VOUT = 0 to VDDn 5. The TDO output driver is served by the VDDQ supply. 6. IOHJ = -4 mA 7. IOLJ = + 4 mA 8. IOHJC = -100 uA 9. IOLJC = +100 uA
JTAG Port AC Test Conditions Parameter
Input high level Input low level Input slew rate Input reference level Output reference level
Conditions
VDD - 0.2 V 0.2 V 1 V/ns VDDQ/2 VDDQ/2 DQ
JTAG Port AC Test Load
50 VDDQ/2
* Distributed Test Jig Capacitance
30pF*
Notes: 1. Include scope and jig capacitance. 2. Test conditions as shown unless otherwise noted.
Rev: 1.00 6/2006
23/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
JTAG Port Timing Diagram
tTKC TCK tTH tTS TDI tTH tTS TMS tTKQ TDO tTH tTS Parallel SRAM input
tTKH
tTKL
JTAG Port AC Electrical Characteristics
Parameter TCK Cycle Time TCK Low to TDO Valid TCK High Pulse Width TCK Low Pulse Width TDI & TMS Set Up Time TDI & TMS Hold Time Symbol tTKC tTKQ tTKH tTKL tTS tTH Min 50 -- 20 20 10 10 Max -- 20 -- -- -- -- Unit ns ns ns ns ns ns
Boundary Scan (BSDL Files) For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications Engineering Department at: apps@gsitechnology.com.
Rev: 1.00 6/2006
24/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Package Dimensions--165-Bump FPBGA (Package D)
A1 CORNER
TOP VIEW
BOTTOM VIEW O0.10 M C O0.25 M C A B O0.40~0.60 (165x)
A1 CORNER
1 2 3 4 5 6 7 8 9 10 11 A B C D E F G H J K L M N P R
11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R
1.0 10.0 B 0.20(4x) 130.05 1.0
150.05
14.0
A
Rev: 1.00 6/2006
0.36~0.46 1.40 MAX.
C
SEATING PLANE
0.20 C
25/28
1.0
1.0
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Ordering Information for GSI Synchronous Burst RAMs Org
1M x 18 1M x 18 1M x 18 512K x 32 512K x 32 512K x 32 512K x 36 512K x 36 512K x 36 1M x 18 1M x 18 1M x 18 512K x 32 512K x 32 512K x 32 512K x 36 512K x 36 512K x 36 1M x 18 1M x 18 1M x 18 512K x 32 512K x 32 512K x 32 512K x 36 512K x 36 512K x 36 1M x 18
Part Number1
GS8161FZ18BD-5.5 GS8161FZ18BD-6.5 GS8161FZ18BD-7.5 GS8161FZ32BD-5.5 GS8161FZ32BD-6.5 GS8161FZ32BD-7.5 GS8161FZ36BD-5.5 GS8161FZ36BD-6.5 GS8161FZ36BD-7.5 GS8161FZ18BD-5.5I GS8161FZ18BD-6.5I GS8161FZ18BD-7.5I GS8161FZ32BD-5.5I GS8161FZ32BD-6.5I GS8161FZ32BD-7.5I GS8161FZ36BD-5.5I GS8161FZ36BD-6.5I GS8161FZ36BD-7.5I GS8161FZ18BGD-5.5 GS8161FZ18BGD-6.5 GS8161FZ18BGD-7.5 GS8161FZ32BGD-5.5 GS8161FZ32BGD-6.5 GS8161FZ32BGD-7.5 GS8161FZ36BGD-5.5 GS8161FZ36BGD-6.5 GS8161FZ36BGD-7.5 GS8161FZ18BGD-5.5I
Type
Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through
Package
165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA
Speed2 (ns)
5.5 6.5 7.5 5.5 6.5 7.5 5.5 6.5 7.5 5.5 6.5 7.5 5.5 6.5 7.5 5.5 6.5 7.5 5.5 6.5 7.5 5.5 6.5 7.5 5.5 6.5 7.5 5.5
TA3
C C C C C C C C C I I I I I I I I I C C C C C C C C C I
Status4
MP MP MP MP MP MP MP MP MP MP MP MP MP MP MP MP MP MP PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ
1M x 18 GS8161FZ18BGD-6.5I Flow Through RoHS-compliant 165 BGA 6.5 I PQ Notes: 1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. MP = Mass Production. PQ = Pre-Qualification. 5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings. Rev: 1.00 6/2006 26/28 (c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
Ordering Information for GSI Synchronous Burst RAMs (Continued) Org
1M x 18 512K x 32 512K x 32 512K x 32 512K x 36 512K x 36
Part Number1
GS8161FZ18BGD-7.5I GS8161FZ32BGD-5.5I GS8161FZ32BGD-6.5I GS8161FZ32BGD-7.5I GS8161FZ36BGD-5.5I GS8161FZ36BGD-6.5I
Type
Flow Through Flow Through Flow Through Flow Through Flow Through Flow Through
Package
RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA RoHS-compliant 165 BGA
Speed2 (ns)
7.5 5.5 6.5 7.5 5.5 6.5
TA3
I I I I I I
Status4
PQ PQ PQ PQ PQ PQ
512K x 36 GS8161FZ36BGD-7.5I Flow Through RoHS-compliant 165 BGA 7.5 I PQ Notes: 1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. MP = Mass Production. PQ = Pre-Qualification. 5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.00 6/2006
27/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8161FZ18/32/36BD
18Mb Sync SRAM Data Sheet Revision History
DS/DateRev. Code: Old; New 8161FZxxB_r1 Types of Changes Format or Content Page;Revisions;Reason * Creation of new datasheet
Rev: 1.00 6/2006
28/28
(c) 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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